Abstract
Si deposition has been achieved by electron beam induced surface reaction. An initial growth process for Si deposition using SiH2Cl2 source gas has been observed in situ by Auger electron spectroscopy. As a result, it became clear that the Si deposition growth rate is ∼0.3 Å/min at 7×10−7 Torr and that the deposition film contents (at. %) are 89% Si, 9.1% O, and 1.9% Cl. Moreover, a 0.5 μm linewidth Si pattern has been demonstrated by direct writing, using electron beam induced surface reaction.
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