New selective deposition technology by electron-beam induced surface reaction

Abstract

A new selective deposition technology using electron beam induced surface reaction has been demonstrated. Electron beam induced W and Cr patterns were deposited by using WF6, WCl6, and Cr(C6H6)2 as sources, respectively. W and Cr depositions were confirmed by analysis using Auger electron spectroscopy (AES) and x-ray microanalysis (XMA). It was observed, with W deposition using the WF6 source, that the W pattern was deposited at below ∼50 °C substrate temperature, but that the substrate was etched at above ∼50 °C substrate temperature. The deposition rate increased with decreasing substrate temperature, and the etching rate increased with increasing substrate temperature. The deposited thickness was proportional to electron beam dose. A 0.15-μm-linewidth Cr pattern was deposited at 5×10−7 C/cm (3.3×10−2 C/cm2) dose by using a modified scanning electron microscope (SEM) system. These results indicate that this technology will be applicable to fabricate nanometer-structure devices.