Abstract
The purpose of the present study was to examine some basic aspects of laser chemical vapor deposition that will be ultimately utilized for solid freefom1 fabrication of three dimensional objects. Specifically, deposition of silicon carbide (SiC) using tetramethylsilane (TMS) as precursor was studied for a rod grown by CO₂ laser-assisted chemical vapor deposition. First. temperature distribution for substrate was analyzed to select proper substrate where temperature was high enough for SiC to be deposited. Then, calculations of chemical equilibrium and heat and mass now with chemical reactions were perfonned to predict deposition rates, deposit profiles, and deposit components. Finally, several rods were experimentally grown with varying chamber pressure and compared with the theoretical results.<br/>
Published Version
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