Abstract
Si-based memristive systems consisting of Ag, amorphous Si, and heavily doped p-type Si nanowires were successfully constructed on plastic substrates through top-down methods, including the crystallographic wet etching of Si wafers, transfer onto plastic substrates, and thin film patterning. The memristive systems showed excellent memory characteristics and flexibility, such as intrinsic hysteric and rectifying behaviors, on/off resistance ratios of >1 × 10(5), and durability for up to 1000 bending cycles. The correlations between the Ag-filament-related nanostructures formed in amorphous Si and the resistance-switching behaviors were carefully examined with the tunneling current model, transmission electron microscopy, and secondary ion mass spectroscopy to explore the switching mechanism. Our study suggests the promising potential of the Si-based memristive systems for the development of next-generation flexible nonvolatile memory.
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