Abstract
In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu2O3 thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu2O3 thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu2O3/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu2O3 thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu2O3 thin film. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising applications in future advanced memory.
Highlights
Resistive switching (RS) behavior, which utilizes the resistance change effect of oxide material, has attracted considerable attention and been widely investigated due to its potential application in future nonvolatile memory (NVM) devices [1]
No diffraction peak was observed from the Lu2O3 film deposited at room temperature, which indicates that the films remain in amorphous phase
In this work, the RS behavior in the Lu2O3 thin films on flexible polyethylene terephthalate (PET) substrate is explored for advanced flexible nonvolatile random access memory applications
Summary
Resistive switching (RS) behavior, which utilizes the resistance change effect of oxide material, has attracted considerable attention and been widely investigated due to its potential application in future nonvolatile memory (NVM) devices [1]. The demand for flexible electronics is revived because of their inherit merits of low cost, light weight, excellent portability, and user-friendly interfaces over conventional rigid silicon technology [6]. Despite these advantages, there is very little in the works about the flexible and NVM devices because of the difficulty to satisfy the dual requirements of memory element.
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