Si(110)2×3-Sb surface studied with angle-resolved photoemission

Abstract

Angle-resolved ultraviolet photoelectron spectroscopy has been used to study the electronic structure of a Si(110)2×3-Sb surface. The surface shows a semiconducting behavior with the highest occupied surface-state band observed around 1.8 eV below the Fermi level (EF). A second state is observed at Γ at 2.2 eV below EF dispersing >2.0 eV towards higher binding energies along the [110] and [111] directions. A third state is observed along the [111] direction around the M point. Surface differential reflectivity experiments showed no optical transitions up to an energy of 3.5 eV, indicating that the minimum energy position of the lowest empty band must be at least 1.8 eV above EF.