Abstract
A new proposal for the extraction of the shunt resistance (Rsh) and saturation current (Isat) of a current-voltage (I–V) measurement of a solar cell, within the one-diode model, is given. First, the Cheung method is extended to obtain the series resistance (Rs), the ideality factor (n) and an upper limit for Isat. In this article which is Part 1 of two parts, two procedures are proposed to obtain fitting values for Rsh and Isat within some voltage range. These two procedures are used in two simulated I–V curves (one in darkness and the other one under illumination) to recover the known solar cell parameters Rsh, Rs, n, Isat and the light current Ilig and test its accuracy. The method is compared with two different common parameter extraction methods. These three procedures are used and compared in Part 2 in the I–V curves of CdS-CdTe and CIGS-CdS solar cells.
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