Abstract
The performance of solar PhotoVoltaic (PV) cell is varied with the effect of internal and external parameters. In this, internal parameters like photogenerated current, reverse saturation current; series resistance, shunt resistance, and ideality factor are main causes for developing hot spot and mismatch effect in a PV cell. In this paper, reverse saturation current, ideality factor and shunt resistance are considered for analysis of different PV cell materials like monocrystalline (m-Si), polycrystalline (p-Si), gallium arsenide (GaAs), cadmium telluride (CdTe), and amorphous silicon (a-Si). The changes in internal parameters with comparison and temperature effect from 293 K to 323 K are considered to plot the performance curve. This result shows that ideality factor and reverse saturation current are controls the voltage level in PV cell. Among these effect GaAs and a-Si having the major and minor deviation in their performance as compared with other PV cell materials.
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