Shubnikov—de Haas oscillations in Si inversion layers in the (110) surface and its vicinal planes

Abstract

Results of studies of Shubnikov---de Haas oscillations in Si inversion layers in the Si(110) surface and its vicinal planes are reported. Samples were prepared by conventional methods not involving an Ar anneal and exhibit a valley degeneracy of 4. This indicates that argon and nitrogen preoxidation annealing methods are not the only way to prepare samples with valley degeneracies predicted by the effective-mass theory. In the samples whose surfaces are tilted toward (100) from the [110] direction, subband separation due to the difference in ${m}_{3}^{*}$, the effective mass perpendicular to the interface is seen. At high magnetic fields, splittings corresponding to the removal of all valley and spin degeneracy are observed.