Short-wavelength (λ≈3.05μm) InP-based strain-compensated quantum-cascade laser

Abstract

The design and implementation of a short-wavelength quantum-cascade laser based on the strain-compensated In0.73Ga0.27As–In0.55Al0.45As–AlAs heterosystem on InP is described. Lasers with a reduced level of doping in the active region require a larger bias voltage and emit at shorter wavelength; the emission wavelength is 3.05μm at T≈80K. The lasers operate up to T≈150K and electroluminescence persists up to room temperature, where the peak position is close to 3.3μm. The short-wavelength limit of such lasers is evaluated based on the dependence of their maximum operation temperatures and on the probable energies of the indirect valleys in the active region.