Abstract
A photodetector based on InAs/InSb/AlSb type-II superlattice (T2SL) with thicknesses of 15, 1 and 4 monolayers respectively, was fabricated and characterized. The interface between InAs and AlAs of one InSb monolayer, increases the λcutoff to 3.3μm, and improves the InAs/AlSb layer correlation and strain balancing. With a −0.5V bias, the dark current at 300 and 200K was 1.1 and 8.5×10−3A/cm2 respectively, and the quantum efficiency at λ=2.75μm, for both 300K and 200K, was 34%. The detectivity was above 109cm-Hz1/2/W for 300K and above 1010cm-Hz1/2/W for 200K between 2.5 and 3μm wavelength.
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