Abstract
报道了50％截止波长为12．5μm的InAs／GaSbII类超晶格长波红外探测器材料及单元器件．实验采用分子束外延技术在GaSb衬底上生长超品格材料．吸收区结构为15ML（InAs）／7ML（GaSb），器件采用PBIN的多层异质结构以抑制长波器件暗电流．在77K温度下测试了单元器件的电流-电压（I—V）特性，响应光谱和黑体响应．在该温度下，光敏元大小为100μm×100μm的单元探测器RmaxA为2．5Ωcm2，器件的电流响应率为1．29A／W，黑体响应率为2．1×109cmHz1/2／W，11μm处量子效率为14．3％．采用四种暗电流机制对器件反向偏压下的暗电流密度曲线进行了拟合分析，结果表明起主导作用的暗电流机制为产生复合电流．
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