Short-Term Plasticity and Synaptic Filtering Emulated in Electrolyte-Gated IGZO Transistors

Abstract

Artificial synaptic devices have attracted a broad interest for hardware implementation of brain-inspired neuromorphic systems. In this letter, a short-term plasticity simulation in an indium–gallium–zinc oxide (IGZO) electric-double-layer (EDL) transistor is investigated. For synaptic facilitation and depression function emulation, three-terminal EDL transistor is reduced to a two-terminal synaptic device with two modified connection schemes. Furthermore, high-pass and low-pass filtering characteristics are also successfully emulated not only for fixed-rate spike train but also for Poisson-like spike train. Our results suggest that IGZO-based EDL transistors operated in two terminal mode can be used as the building blocks for brain-like chips and neuromorphic systems.