Abstract
A two-terminal synaptic device with short-term synaptic plasticity was demonstrated based on electric-double-layer effect between solid-state SiO 2 electrolyte and indium-zinc oxide (IZO) semiconductor film for the first time. Plasma enhanced chemical deposition was used to deposit SiO 2 electrolyte film at room temperature. The formation of electrical double layer (EDL) at the IZO/SiO 2 interface was utilized to mimic signal transmission in biological synapse. Spike-width-dependent synaptic plasticity and high-frequency filter were emulated, which are important forms of short-term synaptic plasticity for computational functions in human brain. The device can be used for neuromorphic electronic systems.
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