Abstract
The AuGaAs(001) interface has been studied by UV- and X-ray photoelectron spectroscopies. By exploiting the different probing depths in the two cases it is shown that within a layer of ∼10 Å from the interface the electronic properties of the semiconductor are different than further away. It is also shown that this difference arises simultaneously with the appearance of a metallic surface and is most likely due to metal induced screening.
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