Abstract
The Si 2p x ray photoelectron spectra of SiOx with a different composition of 0 ≤ x ≤ 2 have been studied experimentally and theoretically. The SiOx films were prepared by low-pressure chemical vapor deposition from SiH4 and N2O source at 750 °C. Neither random bonding nor random mixture models can adequately describe the structure of these compounds. The interpretation of the experimental results is discussed according to a large scale potential fluctuation due to the spatial variation of chemical composition in SiOx.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
