Abstract
Three experiments on a dual magnetron sputtering system capable of providing a pulse power density of >1 kW/cm2, pulse repetition frequency of >104 Hz, and pulse duration of >4 μs were performed for analyzing how the pulse duration, discharge current amplitude, and average discharge power can influence the deposition rate, substrate ion current, and ion-to-atom ratio. The analysis shows that decreasing the pulse duration can increase the ion current density and that varying the deposition rate and the ion current density by varying the magnetron power supply parameters can provide a wide range of ion-to-atom ratios and film growth conditions without any additional device.
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