Abstract
The influence of extremely shallow source and drain junctions on the short channel effects of Si MOSFET's are experimentally investigated. These extremely shallow junctions are realized in MOSFET's with a triple-gate structure. Two subgates formed as side-wall spacers of a main gate induce inversion layers which work as the virtual source and drain. Significant improvement in threshold voltage roll-off and punchthrough characteristics are obtained in comparison with conventional MOSFET's whose junctions are formed by ion implantation: threshold voltage roll off is suppressed down to a physical gate length of 0.1 /spl mu/m while punchthrough is suppressed down to 0.07 /spl mu/m, the minimum pattern size delineated. It is also demonstrated experimentally that the carrier concentrations in the source and drain do not have any influence on the short channel effects. >
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