Short-channel Al 0.5 Ga 0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHz

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The authors have demonstrated 0.25 /spl mu/m gate-length Al/sub 0.5/Ga/sub 0.5/N/GaN MODFETs on sapphire substrates which exhibit CW output power densities >3 W/mm at 18 GHz, the highest reported to date for microwave FETs in the K band. This confirms the promise of the high Al-content AlGaN/GaN MODFET structure.