Abstract
Integrated gate-commutated thyristors (IGCTs) have successfully demonstrated to be well-suited devices for an application in medium-voltage dc transformers based on <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LLC</i> resonant converter topology. This appli- cation enables unusually high switching frequencies in kilohertz range thanks to the zero-voltage switching while maintaining the high conversion efficiency. Moreover, the clamp circuit that is an inseparable part of every hard-switched IGCT-based converter can be completely omitted—further lowering the converter complexity and cost. Nevertheless, without the clamp circuit, the effect of shoot through becomes fatal, considering that the IGCTs have a defined mode of failure in short circuit and the desaturation effect is practically nonexistent. To prevent the shoot through, this letter proposes a simple, yet effective, protection method based on anode-voltage measurement that can be implemented locally on the IGCT gate unit. The validity of the solution is demonstrated using a custom IGCT gate unit in a medium-voltage resonant test setup.
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