Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization

Abstract

The integrated gate commutated thyristor (IGCT) is a high-power semiconductor device with excellent performance, whose operating characteristics are governed by the clamp circuit. In order to further optimize the operating characteristics of IGCT, a bi-objective nonlinear optimization strategy based on IGCT turn-off switching losses and clamp circuit transition time is proposed in this paper, by which the clamp circuit parameters can be obtained quickly and comprehensively. The results show that IGCT turn-off voltage drop and oscillation would be suppressed, and the IGCT turn-off and clamp circuit power losses could also be reduced, which ensures the safe operation of the IGCT and minimizes the impact on the dynamic performance of the power electronics converter based on IGCT in the meantime.