Abstract
Photoluminsecence (PL) studies have been carried out on the sharp zero-phonon lines at 2.461eV (H), 2.458eV (H'), 2.417 eV (R), 2.404 eV (S0), 2.397eV (Q0) and 2.295 eV (T0) in CuGaS2. The R, S0, and Q0 lines are enhanced by the thermal diffusion of Cu. The depth intensity profile showed that these sharp PL lines are related to defects created by the deviation from stoichiometry. Under high magnetic field (7T), the H line splits into three lines and the S0 and R lines split into two lines. No splitting was observed for Q0 and T0 lines and also for the bound exciton lines (2.495, 2.493, 2.490 and 2.487 eV). These Zeeman results are discussed in terms of native defects and impurities included in the luminescence centers.
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