Abstract
High-resistivity (up to 10/sup 5/ Omega -cm) p-type GaAs was obtained by thermal diffusion of Cu and Ag in conducting n-type GaAs wafers. The electrical properties of GaAs:Cu and GaAs:Ag are governed by a deep acceptor level. The semi-insulating InP (up to 10/sup 7/ Omega -cm) could be obtained by thermal diffusion of Cu at 800 degrees C for 20 to 36 h in conducting n-type and p-type InP wafers. Photoluminescence quenching was observed in highly resistive InP:Cu. The qualitative behavior of electrical and optical properties of InP:Cu could be explained by a Cu precipitate compensation model. >
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