Abstract
AbstractThis paper presents a study on the shape control and emission wavelength extension of InP-based InAsSb nanostructures. InGaAs buffer, combined with low growth temperature and medium V/III ratio, provides an effective approach to fabricate InAsSb QDs. By using InGaAsSb sandwich layer to serve as both strain reducing layer and metamorphic buffer layer, the emission wavelength of InAsSb QDs can be extended well beyond 2um, which is very useful for their application as mid-infrared emitters.
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