Abstract
Grazing-incidence small-angle X-ray scattering (GI-SAXS) technique was applied to examine self -assembled InAs quantum dots buried in amorphous arsenic cap layer. The size and the shape assessed from Born approximation of the model structures suggested that the shape of the InAs nanodots grown by molecular beam epitaxy for 2ML and 4ML showed a morphological transition from a dome shape into facetted structure.
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Schedule a callMore From: Transactions of the Materials Research Society of Japan
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