Abstract
This paper reports the shallow trench isolation (STI)-related narrow channel effect (NCE) on the kink behaviour of the 40 nm PD SOI NMOS device. As verified by the experimentally measured data, with a smaller channel width, the onset of the kink effect behaviour occurs at a higher drain voltage and the breakdown voltage is also larger due to the weaker parasitic bipolar device in the floating thin film as a result of a smaller electron recombination lifetime caused by the STI-related defect effect.
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