Shallow junctions for 0.1 μm n-type metal–oxide semiconductor devices

Abstract

The n+/p junctions for 0.1‐μm‐gate n‐type metal–oxide semiconductor must be no deeper than about 30 nm in order to preserve long‐channel behavior in the enhancement mode metal–oxide semiconductor field‐effect transistor. We report junctions formed by implantation of antimony or arsenic of depth 16–64 nm. They have been characterized by secondary ion mass spectroscopy, Rutherford backscattering spectroscopy lattice location studies, transmission electron microscopy, and electrical measurements.