Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations

Abstract

Ohmic contacts on moderately doped In0.53Ga0.47As (p = 4 × 1018 cm-3) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/Ge metallisations. Low contact resistivities have been achieved, i.e. 3–7 × 10-7 Ωcm2. These Au free metallisations exhibit superior surface and interface morphology, with reaction depths well below 50 nm.