Abstract
This paper reports some results in the investigation of deep levels in titanium diffusion-doped silicon; there Ti-related deep levels are observed by the DLTS. There are two elettron traps located atE c−0.23 eV andE c−0.53eV inn-Si(Ti) and a hole trap located atE v+0.32eV inp-Si(Ti). Thermal activation energy and the capture cross-section in the range of experimental temperature and other related parameters for these traps are obtained by transient capacitance studies. Furthermore, from our experimental results, a brief discussion on the bonding feature of traps and on their pinning to which band is given.
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