Abstract
The application of Static Random-Access Memory (SRAM), becomes more and more widely in aviation. However, the large amount of SRAM cells is very vulnerable to radiation included single-event upset (SEU). Based on the detection requirement of SRAM’s SEU, the detected circuit of the SEU on SRAM is designed. Then the method of redundancy check is used in the reinforcement of the SEU. The test results shows that the detection circuit can detect the SRAM-type storage chip sensitive bit of the single particle and the proposed method can improved the performance of anti-single particles of SRAM several times as high as 1E6.
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