Abstract
Selected microcircuits constructed in National Semiconductor's FACT (Fairchild advanced CMOS technology) were tested for heavy-ion-induced single event upset (SEU) and latchup. The devices showed no signs of heavy-ion-induced latchup for linear energy transfer (LET) values up to 120 MeV/(mg/cm/sup 2/). SEU LET thresholds varied within a rather narrow range of 40 to 60 MeV/(mg/cm/sup 2/). The test results suggest that FACT devices will exhibit higher tolerances to the cosmic ray environment than functionally similar microcircuits fabricated in HC/HCT (high-speed CMOS), ALS (advanced low-power Schottky), and LS (low-power Schottky) technologies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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