Abstract
GaN film was grown on a (111)Si substrate using AlGaN intermediate layer by selective metalorganic vapor phase epitaxy. The series resistance of the GaN/AlGaN/Si diode was evaluated as a function of the thickness and the alloy composition of the AlGaN intermediate layer. The resistance was decreased by reducing the thickness of the intermediate layer but showed a minimum value. The minimum resistance was evaluated as a function of the alloy composition. Assuming an exponential increase of the minimum resistance as a function of the conduction band offset in the AlGaN/Si interface, the resistance for a GaN/Si hetero interface was estimated to be 0.0018 Ω cm2. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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