Abstract
This paper summarizes the first results of characteristics parameters obtained from current–voltage ( I– V) measurements for Ag/p-SnS and Ag/p-SnSe structure. The reverse and forward bias current–voltage characteristics of Ag Schottky contacts on a Bridgman–Stockbarger grown p-SnS and p-SnSe layered semiconducting material have been measured at various temperatures. We have tried to determine contact properties such as apparent barrier heights Φ B0, ideality factor n and series resistance R s. The apparent barrier height and ideality factor calculated by using thermionic emission theory were found to be strongly temperature dependent. Evaluating forward I– V data reveals a decrease at the apparent barrier height, but an increase at the ideality factor with decrease in temperature. It is shown that the values of R s estimated from Cheung’s method were strongly temperature dependent and decreased with increasing temperature. It has been found that both contacts are of Schottky type.
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