Abstract
The 15kV SiC IGBT has second higher dv/dt turn-off slope above the punch-through level resulting in EMI. Increasing gate-resistance also slows the first dv/dt causing increased switching loss. A snubber capacitor assisted turn-off solves these issues for a high power dual active bridge (DAB) converter based on this device, but the light load turn-on ZVS becomes hard to achieve. This paper proposes a series injection enabled triangular current shaping at the light load turn-off instant in the DAB to create enough current for smooth free-wheeling transition of device voltage during the dead-time period for ZVS turn-on. The proposed technique is validated through simulations followed by experiments on a medium voltage DAB hardware implementation of this technique.
Published Version
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