Abstract
Gallium-arsenide Schottky low-high-low IMPATT-diode chips have been successfully combined in series. A maximum c.w. power output of 22.5 W has been repeatedly obtained in X-band by using six 4-W 0.2-mm-diameter mesa GaAs devices. After careful preselection of GaAs chips (yield ≃ 20%), the GaAs devices combined more readily than did silicon p+-n-n+ impatt chips.
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