Use the Indirect Energy Conversion of the Phosphor Layer to Improve the Performance of Nuclear Batteries

Abstract

AbstractThe GaAs X‐ray nuclear battery without and with the phosphor layer was investigated under the irradiation of the X‐ray tube. The output power was significantly improved by introducing ZnS : Cu or (Zn,Cd)S : Cu phosphor layer, but not by ZnS : Ag phosphor layer because of the degree of spectral matching between the phosphor layer and the GaAs device. To analyze the radioluminescence (RL) effects of the phosphor layers under X‐ray excitation, we measured the RL spectra of the different phosphor layers. The RL spectra of the different phosphor layers revealed their fluorescence in the wavelength range of approximately 375–675 nm. Light at the exact wavelength can be used by the GaAs device to produce electricity. Considering irradiation damage of ZnS : Cu phosphor layer induced by X‐rays, an additional experiment was carried out to examine irradiation damage of ZnS : Cu. The results indicate that irradiation effect on the RL performance of ZnS : Cu was not obvious.