Abstract
Sequential resonant and nonresonant tunneling have been investigated in doped GaAs/AlGaAs multiple quantum wells. Negative differential resistance attributable to high field domains expanding through the structure are observed. It is argued that the conductance mechanism is changing with increasing bias, from resonant ground-state tunneling in the low bias regime to nonresonant ground and ground to first exited state in the oscillating differential resistance regime. At higher bias the evolution from nonresonant to resonant tunneling is studied. Calculated tunneling currents are in good agreement with the measured currents both for on and off resonance.
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