Abstract
Intersubband infrared absorption and sequential resonant tunneling in GaAs/AlGaAs multiple quantum wells grown on Si substrates are reported for the first time. The observed electrical and optical properties of the multiple quantum wells on Si are comparable to similar structures grown directly on GaAs substrates. This suggests the potential application of integrating the GaAs/AlGaAs multiple quantum well devices with Si very large scale integrated circuits for long-wavelength (near 10 μm) infrared detection.
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