Abstract
Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(001) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of γ-FeSi2, α-FeSi2, and β-FeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the γ-α and α-β phase transitions were determined as ≊11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases.
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