Abstract
The error rate of low-field mobility (μ0) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (Nd) for a typical value of the first order mobility attenuation factor θ0 ≈ 0.1 V−1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (μ0_acc) and the bulk neutral channel mobility (μbulk) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between μ0_acc and μbulk is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform.
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