Abstract
The ambipolar behavior limits the performance of carbon nanotube field-effect transistors. A double-gate device is proposed to suppress this behavior. In this device, the first gate controls carrier injection at the source contact and the second one controls carrier injection at the drain contact, which can be used to suppress parasitic carrier injection. The effect of the second gate voltage on the performance of the device has been investigated. Our results indicate that by applying a proper voltage range to the second gate, improved device characteristics can be achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.