Abstract
The ambipolar behavior limits the performance of carbon nanotube field-effect transistors. A double-gate device is proposed to suppress this behavior. In this device, the first gate controls carrier injection at the source contact and the second one controls carrier injection at the drain contact, which can be used to suppress parasitic carrier injection. The effect of the second gate voltage on the performance of the device has been investigated. Our results indicate that by applying a proper voltage range to the second gate, improved device characteristics can be achieved.
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