Nonquasi-Static Effects and the Role of Kinetic Inductance in Ballistic Carbon-Nanotube Transistors

Abstract

Nonquasi-static effects in ballistic carbon-nanotube (CN) FETs (CNFETs) are examined by solving the Boltzmann transport equation self-consistently with the Poisson equation. We begin by specifying the proper boundary conditions that should be employed in time-dependent simulations at high speeds; these are the proper boundary conditions for a characterization of the so-called intrinsic transistor, i.e., the internal portion of the device that is unaffected by the source and drain contacts. A transmission-line model that includes both the kinetic inductance (LK) and quantum capacitance (CQ) is then analytically developed from the Boltzmann and Poisson equations, and it is shown to represent the intrinsic transistor's behavior at high frequencies, including a correct prediction of resonances in the transistor's y-parameters. Finally, we show how to represent LK using lumped elements in the transistor's traditional quasi-static equivalent circuit, and we demonstrate that the resulting circuit is capable of modeling the intrinsic behavior of a ballistic CNFET, including the observed resonances, to frequencies beyond the unity-current-gain frequency fT. External parasitics can be easily added for an overall compact model of ballistic CNFET operation.