Abstract

Silicon carbide nanoparticles generally refer to particles about 1–100 nm in size and single crystal in most cases. Silicon carbide nanocrystals smaller than 10 nm are also called SiC quantum dots; in this size regime, on account of the strong spatial confinement of the carriers, SiC nanocrystals exhibit obvious quantum size effects, especially the quantum confinement effect. As a result, the energy gap of the silicon carbide nanocrystals widens and luminescence shifts toward smaller wavelengths (blueshift) gradually as they become smaller. In addition, the quantum yield may be improved by several orders of magnitude relative to that of the bulk materials. Since the dimensions of the nanoparticles are very small, the surface strongly affects their properties. Silicon carbide is a compound semiconductor, and its surface has multiple bonding structures involving Si, C, O, H, and other atoms and so a variety of surface defects can form, consequently resulting in complex luminescence properties. In this chapter, the preparation methods, electronic structures, luminescence properties, and application of silicon carbide nanoparticles are discussed.

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