Abstract
This paper mainly carries out research on TFET device based on FDSOI. The simulations were performed at the single event transient effect (SET), The effects of The high-energy particles from different positions, different incident depths and different incident angles, and the mechanism of charge collection in the sensitive position are analyzed, the effects of different bias voltages on SET is discussed. Finally, a device-level Radiation-Hardened technique for SET of the device is proposed.
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