Abstract
Zinc Oxide (ZO) and Erbium doped zinc oxide (EZO) thin film were deposited on corning glass substrate by sol-gel method. Concentration of erbium is varying from 0.0 to 0.2 at.%. These films were characterized by using X-ray diffraction (XRD), UV-VIS-NIR transmission and single beam Z-scan technique under illumination of frequency doubled Nd:YAG laser. The films developed were found to be well crystallized with hexagonal wurtzite structure having a preferential growth orientation along the ZnO (002) plane. A blue-shift in band gap was observed in the EZO film in comparison to ZO film. The films clearly exhibit a negative value of nonlinear refraction at 532 nm which is attributed to the two photon absorption and week free carrier absorption. The presence of reverse saturable absorption (RSA) in ZO and EZO thin film infers that ZnO is a potential material for the development of optical limiter for protection of sensors in defence application.
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