Abstract
In this paper the pressure-magneto-electric effect of a junction field-effect transistor (JFET) is discussed by using standard relaxation techniques. A theoretical evaluation of the pressure sensitivity and Hall sensitivity of n-channel silicon JFET with various geometries(W/L), gate voltages(VCS), and drain voltages (VDC) is made. The results show that supposing W/L≤1/2−1, a junction field-effect pressure sensor with high stability and low noise is designed.
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