Abstract
Semipolar {nn¯01} InGaN/GaN quantum wells (QWs) (n = 1−3) are fabricated on top of GaN microstructures, which consist of semipolar {11¯01} facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on {11¯01} facets, {nn¯01} ridge QWs show an intense emission at ∼440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {nn¯01} InGaN ridge QWs at 13 K is 310 ps, which is comparable to that in {11¯01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
