Abstract
Semipolar {nn¯01} InGaN/GaN quantum wells (QWs) (n = 1−3) are fabricated on top of GaN microstructures, which consist of semipolar {11¯01} facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on {11¯01} facets, {nn¯01} ridge QWs show an intense emission at ∼440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {nn¯01} InGaN ridge QWs at 13 K is 310 ps, which is comparable to that in {11¯01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%.
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