Abstract
AbstractThe growth of semi‐polar InN(10$ \bar 1 $3) on a GaAs(110) substrate by metal organic vapor phase epitaxy (MOVPE) was investigated. It was confirmed that the semi‐polar InN(10$ \bar 1 $3) plane was dominantly grown by mixing 0.4% hydrogen in nitrogen carrier gas, whereas a ‐plane InN was mixed without hydrogen gas. An ω‐mode X‐ray rocking curve of the InN(10$ \bar 1 $3) plane revealed that the InN(10$ \bar 1 $3) crystals were tilted approximately 1.1∼1.4° in the direction of the GaAs[111] due to the structural difference between InN(10$ \bar 1 $3) and GaAs(110). Although the as‐grown InN was twin crystal, however, the integrated intensity of smaller peak was less than 1% in related to that of the other peak. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
