Abstract
We observe the formation of {101¯5} facets on nanocolumnar films of AlN grown by plasma-assisted molecular beam epitaxy on Si (111) wafers at 1000 °C and N-rich conditions. InN/AlN multiple quantum wells are grown on top of the semipolar facets of AlN. Scanning transmission electron microscopy and X-ray diffractometry reveal the {101¯5} facet planes, thickness, and strain state of the InN and AlN spacer layers. By varying the quantum well thicknesses from 3 to 5 monolayers, photoluminescence emission peaks are observed at wavelengths from 380 nm to 550 nm. Time-resolved photoluminescence reveals short lifetimes from 30 to 70 ps.
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