Abstract
We have demonstrated the InGaN/GaN single-quantum-well (SQW) red light-emitting diodes (LEDs) grown on the free-standing GaN (202̄1) substrate with a forward voltage as low as 2.8 V at 20 mA. A low p-GaN growth temperature is required to prevent the structure deterioration during the p-GaN growth. The reduction of the forward voltage was observed as the emission wavelength increased in the (202̄1) SQW LEDs, which is attributed to its reversed polarization-related electric field compared to the conventional c-plane LEDs.
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